2022-11-14 09:16:48
毛重：0.000011KG
分类：MOSFET
品牌：JSCJ(长晶科技)
封装：SOT-23极性
Polarity：P
V(BR)DSS(Max)(V)：-20V
漏极电流ID：-2.3A
漏源导通电阻RDS(on)：0.112Ω
最大耗散功率PD：0.4W
漏源电压VDS：-0.4V
原厂料号：CJ2301
采购链接：https://bomyg.com/goodsInfo/411028.html
图片展示：
Encapsulate MOSFETS
BSS84 P-CHANNEL MOSFET
V(BR)DSS | RDS(on)MAX | ID |
-50V | 8Ω@-10V | -0.13A |
10Ω@-5V |
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.
FEATURE
z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space
APPLICATION MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
z DC−DC converters,load switching, power management in portable and battery−powered products such as computers, printers, cellular and cordless telephones.
MARKING Equivalent Circuit
Parameter | Symbol | Value | Unit |
Drain-Source Voltage | VDS | -50 | V |
Gate-Source Voltage | VGS | ±20 | V |
Continuous Drain Current | ID | -0.13 | A |
Pulsed Drain Current (note 1) @tp <10 μs | IDM | -0.52 | A |
Power Dissipation | PD | 225 | mW |
Thermal Resistance from Junction to Ambient (note 2) | RθJA | 556 | ℃/W |
Operation Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | ℃ |
Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds | TL | 260 | ℃ |
1
MOSFET ELECTRICAL CHARACTERISTICS
T =25a ℃ unless otherwise specified
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
STATIC CHARACTERISTICS |
|
|
|
|
|
Drain-source breakdown voltage | V (BR)DSS | VGS = 0V, ID =-250µA | -50 |
|
| V |
Zero gate voltage drain current | IDSS | VDS =-50V,VGS = 0V |
|
| -15 | µA |
VDS =-25V,VGS = 0V |
|
| -0.1 | µA |
Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V |
|
| ±5 | µA |
Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =-250µA | -0.9 | -1.6 | -2 | V |
Drain-source on-resistance (note 3) | RDS(on) | VGS =-5V, ID =-0.1A |
| 5.8 | 10 | Ω |
VGS =-10V, ID =-0.1A |
| 4.5 | 8 | Ω |
Forward transconductance (note 1) | gFS | VDS=-25V; ID=-100mA | 50 |
|
| mS |
DYNAMIC CHARACTERISTICS (note 4) |
|
|
|
|
|
Input capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz |
| 30 |
| pF |
Output capacitance | Coss |
| 10 |
| pF |
Reverse transfer capacitance | Crss |
| 5 |
| pF |
SWITCHING CHARACTERISTICS (note 4) |
|
|
|
|
|
Turn-on delay time | td(on) | VDD=-15V, RL=50Ω, ID =-2.5A |
| 2.5 |
| ns |
Turn-on rise time | tr |
| 1 |
| ns |
Turn-off delay time | td(off) |
| 16 |
| ns |
Turn-off fall time | tf |
| 8 |
| ns |
SOURCE−DRAIN DIODE CHARACTERISTICS |
|
|
|
|
|
Continuous Current | IS |
|
|
| -0.13 | A |
Pulsed Current | ISM |
|
| -0.52 | A |
Diode forward voltage (note 3) | VSD | IS=-0.13A, VGS = 0V |
|
| -2.2 | V |
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to producting
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